A \u201cbottom-up\u201d approach to device fabrication is generally regarded as cumbersome when creating device quality semiconductor material; however, certain device geometries cannot be constructed from conventional \u201ctop-down\u201d methods.\u00a0 If electrochemical growth of device quality material is possible it will represent a breakthrough for device fabrication in one of the fastest increasing areas of research, nanotechnology.\u00a0 This project investigates the possibility of growing single crystal InSb using electrodepostion techniques.\u00a0 Once samples have been developed x-ray and electron diffraction will be used to determine the crystal structure, chemical composition will be studied with Auger analysis, and crystal quality will be studied by optical absorption.\u00a0<\/p>\n","protected":false},"excerpt":{"rendered":"
Mike Minar with Kathy KashThe Growth of Single Crystal InSb via Electrochemical Deposition<\/p>\n
A \u201cbottom-up\u201d approach to device fabrication is generally regarded as cumbersome when creating device quality semiconductor material; however, certain device geometries cannot be constructed from conventional \u201ctop-down\u201d methods.\u00a0 If electrochemical growth of device quality material is possible it will represent a breakthrough for device fabrication in one of the fastest increasing areas of research, nanotechnology.\u00a0 This project investigates the possibility of growing single crystal InSb using electrodepostion techniques.\u00a0 Once samples have been developed x-ray and electron diffraction will be used to determine the crystal structure,<\/p>\n