Jacob Marx with Xuan Gao
The epitaxial growth of topological insulator thin films using chemical vapor deposition
Topological insulators are a class of quantum materials with metallic surface states existing inside the bulk band gap. Current method of producing thin films of topological insulator is mainly based on molecular beam epitaxy. The purpose of this research is to investigate and understand the growth of large scale topological insulator thin films in a much less complicated vapor deposition system. Working with the vapor deposition method, we attempt to minimize impurities and explore the growth of different topological insulator materials along with studying their electrical properties.