Bradley C. Odhner with Philip Feng

Black Phosphorus Field Effect Transistors: Device Physics and Performance

We are nearing the end of Moore’s law. Silicon based transistors, the amazing technology that led to the huge growth of Silicon Valley, are rapidly approaching a point where they will not be able
to progress anymore. In their stead, we must look to other ways to create transistors that can be smaller, faster, and more effcient to power tomorrow’s computers, cell phones, and other everyday
objects. Black phosphorus is one promising candidate. A 2D material, it has the capability to supplant silicon as the new mainstream base of transistors. Before that point however, there is still
much research to be done to fully characterize the properties of black phosphorus so that future effort can be put towards mass production of new transistors. I hope to contribute to this necessary
research by investigating some of the hitherto unexamined properties of black phosphorus devices,
namely, capacitance-voltage characteristics, and random telegraph noise.