Derek Tang with Xuan Gao

Growth of Indium MonoSelenide for 2D Semiconductor Devices

Two-dimensional (2D) van der Waals (vdW) materials with structures similar to graphene and graphite have emerged as a major research area in materials and condensed matter physics research. While an abundance of recent efforts were spent on transition metal dichalcogenides (TMDCs) for 2D semiconductor applications, it was recently found that the 2D semiconductor indium monoselenide (InSe) has an intrinsic electron mobility that is much higher than TMDCs. Traditional procedures of mechanical exfoliation to form layers of InSe lack the ability to create thin films with consistent thickness and shapes. This study seeks to improve growth methods for thin films of indium selenide by physical vapor deposition. Additionally, our goal is to characterize the physical and electrical properties of films in addition to measuring their carrier mobility. If successful, the grown InSe films have the potential for high electronic performance in the next generation nanoelectronics and optoelectronics.