Zachary Newman with Professor Kathleen Kash

Plasma-Assisted Liquid Phase Epitaxial Growth of III-Nitrides

The wide bandgap group III-nitrides including GaN, AlN, and InN are important for visible/UV optoelectronics as well as high power devices. In this project we will attempt to grow low defect single crystal films of III-nitrides on sapphire substrates. Currently III-nitrides are grown by chemical vapor epitaxy or at high pressures.  These methods make growing large, high quality crystals somewhat difficult. We will synthesize films by plasma-assisted liquid phase epitaxy (PLPE), which is a low pressure synthesis technique involving microwave activated nitrogen. Parameters such as growth temperature, plasma composition and power will be varied to investigate optimal growth conditions and processes. Crystalline quality will be characterized by scanning electron microscopy and X-ray diffraction.