Yang Han with Xuan Gao
Fabrication and Electrical Characterization of Molybdenum Trioxide Thin Films
Two-dimensional (2D) van der Waals (vdW) materials have been widely studied in recent decades. Among 2D vdW materials, transition metal oxides with 2D vdW structure have drawn the most attention because of their potential in electronic applications. Although the performance of most 2D transition metal oxides does not exceed that of conventional material, which is silicon, for electronic devices, these materials are still worth being investigated due to their unique electrical properties, and their fundamental properties have not been fully explored. In this project, we will fabricate MoO3 thin films on SiO2 substrates using vacuum deposition and rapid thermal process. We will focus on the effect of different annealing conditions on the structure and the electrical properties, such as conductivity and carrier mobility, of the fabricated MoO3 thin films. This work will demonstrate whether MoO3 has the potential for novel applications in electronic devices.