Improving the I-V characteristics of Molydinium DiSulfide transistors h-Boron Nitride

Vipul Malik with Philip Feng

Improving the I-V characteristics of Molydinium DiSulfide transistors h-Boron Nitride

Molybdenum disulfide (MoS2) transistors have attracted considerable attention. Molybdenum disulfide (MoS2) transistors on boron nitride (BN) substrates in particular show interesting I-V characteristics. Unfortunately these transistor devices currently exhibit undesirable I-V characteristics at low temperatures due to the degradation of the MoS2 contacts at low temperatures. This project focuses on mastering device fabrication and improving device I-V characteristics at low temperatures. In order to master device fabrication, understanding the techniques of exfoliation and transfer for the MoS2 is necessary, along with other techniques such as annealing of the contacts. After the base device layer is made, a second layer of metal will be added to the contacts of the device. This metal layer will be added by evaporation through a stencil mask, etched using a focused ion beam. The new device will then be brought down to low temperatures and tested in order to evaluate and understand its I-V characteristics.

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