Christopher Wagner with Xuan Gao
Investigating the growth mechanism of atomically thin transition metal dichalcogenides
Monolayers of transition metal dichalcogenides (TMDCs), such MoS2 and MoSe2 , have been the subject of increased interest due to their promising potential in nanoelectronics, optoelectronics, and other fields. To date, the synthesis of large area high quality monolayer TMCDs has proven difficult, with high quality samples generally being restricted to the micron scale. The intent of this project is to study the growth mechanism of TMDCs on a substrate via the physical vapor deposition method. An increased understanding of the material’s growth process may facilitate the synthesis of single layer wafer-scale, high quality TMDC.