Vipul Malik with Philip FengImproving the I-V characteristics of Molydinium DiSulfide transistors h-Boron NitrideMolybdenum disulfide (MoS2) transistors have attracted considerable attention. Molybdenum disulfide (MoS2) transistors on boron nitride (BN) substrates in particular show interesting I-V characteristics. Unfortunately these transistor devices currently exhibit undesirable I-V characteristics at low temperatures due to...